Sub-10-nm Nanogap Fabrication by Silicidation
(2013) 13th IEEE International Conference on Nanotechnology 2013 — Location: Beijing (China) (5.August.2013)
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- Abstract
- We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation. The nanogap width is determined by the metal layer thickness. Our proposed method provides nanogaps with either symmetric or asymmetric electrodes, as well as multiple nanogaps within one unique process step. Therefore, this method allows for high throughput and large-scale production.
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Citations
Tang, X., Francis, L., Dutu, C. A., Reckinger, N., & Raskin, J.-P. (2013). Sub-10-nm Nanogap Fabrication by Silicidation. Proceedings of the 13th IEEE International Conference on Nanotechnology 2013, p. 570-573. https://doi.org/10.1109/NANO.2013.6720811