SOI devices and ring oscillators on thin dielectric membranes for pressure sensing applications
(2007) 2007 IEEE International SOI Conference — Location: Indian Wells, CA, USA (1.October.2007)
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- Abstract
- As first characterization results, static measurements showed variations between -2% and +6% of drain current of individual devices, VCOs revealed to be responsive to mechanical solicitation and, finally edgeless devices proved to be suitable for dynamic pressure sensing. Hence, the structure and the sensitivity of these systems allow us to figure out a wide range of possible applications, such as propeller shaft speed measurements.
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Citations
Olbrechts, B., Rue, B., Rinaldi, G., Stiharu, I., Flandre, D., & Raskin, J.-P. (2007). SOI devices and ring oscillators on thin dielectric membranes for pressure sensing applications. Proccedings 2007 IEEE International SOI Conference, 109-110. https://hdl.handle.net/2078.5/231114