A low-voltage, low-power microwave SOI MOSFET
(1996) IEEE International SOI Conference 1996 — Location: Fort Myers (USA) (30.September.1996)
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- Abstract
- Summary form only given. Recently, it has been demonstrated that the use of high-resistivity SOI (SIMOX) substrates (5,000 and 10,000 Ω.cm) yields MOSFETs which offer interesting microwave performances. Indeed unity-gain frequencies (fT) of 14 and 23.6 GHz and maximum oscillation frequencies (fmax) of 21 and 32 GHz have been reported for effective gate lengths of 0.36 and 0.25 μm, respectively, and using supply voltages ranging from 3 to 5 volts. Such devices can be integrated with planar lines to implement MMIC circuits. These transistors were fabricated using a dedicated MOS process, called MICROXTM, which uses non-standard CMOS features, such as a metal (gold) gate and air-bridge metallisation. In this work, the high-frequency performances of microwave transistors fabricated using a standard fully-depleted SOI CMOS process are described. These devices are, therefore, compatible with analog and digital circuits fabricated using the same low-cost process
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Colinge, J.-P., Chen, J., Flandre, D., Raskin, J.-P., Gillon, R., & Vanhoenacker-Janvier, D. (1996). A low-voltage, low-power microwave SOI MOSFET. Proceedings of the IEEE International SOI Conference, 1996, 128-129. https://doi.org/10.1109/SOI.1996.552527