Frequency degradation of SOI MOS device output conductance
(2003) 2003 IEEE International SOI Conference. Proceedings — Location: Newport Beach, CA (USA) (29.September.2003)
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- Abstract
- In this paper analysed about the Fully Depleted (FD), Body Tied (BT) or Dynamic Threshold (DT) devices and compare the output conductance of these devices in the 100 kHZ-4 GHZ frequency range.
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Citations
Lederer, D., Dehan, M., Vanhoenacker-Janvier, D., Flandre, D., & Raskin, J.-P. (2003). Frequency degradation of SOI MOS device output conductance. 2003 IEEE International SOI Conference. Proceedings (Cat. No.03CH37443), 76-77. https://hdl.handle.net/2078.5/230715