Graphene growth by CVD using liquid precursors
(2012) American Physical Society – APS, March meeting 2012 - Graphene: Growth, Mechanical Exfoliation, and Properties — Location: Boston, MA, USA (27.February.2012)
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- Abstract
- Chemical vapor deposition (CVD) represents an attractive route to synthesize large-area graphene. Its catalytic growth using metals has been studied in recent years, the most popular being nickel and copper. We have successfully grown graphene on copper by CVD at ambient pressure using alcohols as the carbon feedstock. The produced materials are analyzed by SEM, TEM, Raman spectroscopy and transferred onto Si/SiO2 substrates using standard methods. Raman fingerprint of monolayer graphene is present in our samples. This technique represents a safer and more versatile alternative to the production of graphene compared to the synthesis of graphene using methane at low pressure.
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Campos Delgado, J., Botello Mendez, A. R., Hackens, B., Charlier, J.-C., Pardoen, T., & Raskin, J.-P. (2012). Graphene growth by CVD using liquid precursors. Proceedings of the American Physical Society – APS, March meeting 2012 - Graphene: Growth, Mechanical Exfoliation, and Properties, p. Paper # X12.00010. https://hdl.handle.net/2078.5/230678