Graphene growth by CVD using liquid precursors

Campos Delgado, Jessica;Botello Mendez, Andrés Rafael;Hackens, Benoît;Charlier, J.-C.;Raskin, Jean-Pierre;et.al.
(2011) Lavoisier Discussions - Graphene on metals: CVD growth and exploitation — Location: Abbaye-Ecole de Sorèze, France (26.October.2011)

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Abstract
Chemical vapor deposition (CVD) represents an attractive route to synthesize large-area graphene. Its catalytic growth using metals has been studied in recent years, the most popular being nickel and copper. We have successfully grown graphene on copper by CVD at ambient pressure using alcohols as the carbon feedstock. The produced materials are analyzed by SEM, TEM, Raman spectroscopy and transferred onto Si/SiO2 substrates using standard methods. Raman fingerprint of monolayer graphene is present in our samples. This technique represents a safer and more versatile alternative to the production of graphene compared to the synthesis of graphene using methane at low pressure.
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Campos Delgado, J., Botello Mendez, A. R., Hackens, B., Charlier, J.-C., Pardoen, T., & Raskin, J.-P. (2011). Graphene growth by CVD using liquid precursors. Proceeding of the Lavoisier Discussions - Graphene on metals: CVD growth and exploitation, pp. 11-14. https://hdl.handle.net/2078.5/230581