Coupling effects in high-resistivity SIMOX substrates for VHF and microwave applications
(1995) IEEE International SOI Conference, 1995 — Location: Tucson (USA) (3.October.1995)
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- Abstract
- The use of high-resistivity SIMOX substrates has been proposed to enable the integration of low-loss adapted lines for MMIC applications in SOI CMOS technology. In this work we investigate the impact of the substrate resistivity on another important substrate coupling effect: the intrinsic load impedance of active transistors in amplifier configuration, which conditions the device maximum stable frequency. Related device and line modelling aspects are also discussed
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Raskin, J.-P., Vanhoenacker-Janvier, D., Colinge, J.-P., & Flandre, D. (1995). Coupling effects in high-resistivity SIMOX substrates for VHF and microwave applications. Proceedings of the IEEE International SOI Conference, 1995, 62-63. https://hdl.handle.net/2078.5/230534