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Abstract
Alternatively to resistive elements, active MOSFETs are advantageously used as electromechanical transducers in smart pressure sensors. Moreover, a quasi-digital behaviour is obtained thanks to a frequency output, easing the interfacing as well as providing higher noise immunity. Besides its intrinsic electrical benefits, SOI technology is particularly suitable for such approach, as the buried oxide (BOX) constitutes an ideal etch-stop layer for releasing very thin and uniform membranes. Through this paper, the following conclusions are validated: (i) active transducers may be placed at the center of small membranes, for robustness and process window enlargement purposes, and (ii) very sensitive solutions based on PMOS-mirror cells do take advantage of rectangular shaped membranes in order to provide a necessary strain asymmetry.
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Olbrechts, B., & Rue, B. (2014). PMOSFET-based Pressure Sensors in FD SOI. https://hdl.handle.net/2078.5/230095