gm/ID-derivative Method for Threshold Voltage Extraction in Junctionless MOSFETs

Rudenko, T.;Nazarov, A.;Barraud, S.;Kilchytska, Valeriya;Flandre, Denis
(2019) 5th joint EUROSOI – ULIS 2019 Conference — Location: Grenoble (France) (April.2019)

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Authors
  • Rudenko, T.Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
    Author
  • Nazarov, A.Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
    Author
  • Barraud, S.CEA-LETI, Minatec, Grenoble, France
    Author
  • Kilchytska, ValeriyaUCLouvain
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  • Flandre, Denisorcid-logoUCLouvain
    Author
Abstract
In this work, we validate an applicability of the gm/ID-derivative method for the threshold voltage extraction in junctionless MOSFETs using numerical simulations, analytical modeling and experimental data. We show that this technique is more accurate than the traditionally used dgm /dVg method.
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Rudenko, T., Nazarov, A., Barraud, S., Kilchytska, V., & Flandre, D. (2019). gm/ID-derivative Method for Threshold Voltage Extraction in Junctionless MOSFETs. 5th joint EUROSOI – ULIS 2019 Conference, Grenoble (France). https://hdl.handle.net/2078.5/228929