This invited paper reviews main approaches in the electrical characterization of advanced MOSFETs towards their target analog and RF applications. Advantages and necessity of those techniques will be demonstrated on different study cases of various advanced MOSFETs, such as FDSOI, FinFET, NW in a wide temperature range, based on our original research over the last years.
Kilchytska, V., Makovejev, S., Kazemi Esfeh, B., Nyssens, L., Halder, A., Raskin, J.-P., & Flandre, D. (2020). Electrical characterization of advanced MOSFETs towards analog and RF applications. Proceedings of the 2020 IEEE Latin America Electron Devices Conference (LAEDC), 4. https://doi.org/10.1109/LAEDC49063.2020.9073536