DNA Electrical Detection Based On Si-CMOS Compatible Al Capacitors and Inductors Coated With Metal Oxides (Concentrations lower than 1 nM)

Moreno-Hagelsieb, L.;Pampin, R.;Laurent, G.;Raskin, Jean-Pierre;Remacle, J.;et.al.
(2005) Second Focused Workshop on Electronic Recognition of Bio-molecules — Location: Beckman Institute for Advanced Science and Technology, University of Illinois in Urbana, Illinois (USA) (7.September.2005)

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Abstract
As shown in previous presentations/articles during the first ERBM, the challenge is still there in achieving the detection of the DNA hybridization for concentrations as low as it is detected using current fluorescent methods (<1 nM), our previous results using aluminum structures covered by metal oxides (obtained by anodization), i.e. Al2O3 and TiO2, using the silver precipitation as a signal enhancement, already achieved a detection going down to 1 nM concentration complementary ssDNA, in order to be able to detect lower concentration levels further work has to be done to reduce the electrical noise produce by the non specific silver precipitation par rapport to the desired precipitation (due to the presence of hybridized DNA). In this work we will present the results by the characterization of the biological and technological processes done in order to reduce this parasitic silver precipitations, i.e. anodization chemicals and current density, metallic oxides obtained by deposition such as ALD, surface activation, functionalizing chemicals, etc. by the quantification of the presence of OHs groups and silver precipitation by SEM imaginery obtaining the percentage covered area in both hybridized and non-hybridized areas, second one representing the noise. By the fabrication of interdigitated fingers capacitors with lower fingers width and spaces (prepare for being measure at low and high frequencies), as suggested by our previous work, allow us to start experimenting going down to concentrations as low as 0.1 nM complementary ssDNA, detection done by obtaining their capacitance and resonance frequency as well as their effect as FETs (field effect transistors).
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Moreno-Hagelsieb, L., Pampin, R., Laurent, G., Raskin, J.-P., Flandre, D., Foultier, B., & Remacle, J. (2005). DNA Electrical Detection Based On Si-CMOS Compatible Al Capacitors and Inductors Coated With Metal Oxides (Concentrations lower than 1 nM). Second Focused Workshop on Electronic Recognition of Bio-molecules, Beckman Institute for Advanced Science and Technology, University of Illinois in Urbana, Illinois (USA). https://hdl.handle.net/2078.5/228596