Porous Silicon: when void enables new Si application fields
(2016) Third Winfab Scientific Day — Location: UCL, Louvain-la-Neuve (Belgium) (29.January.2016)
Files
WinfabdayabstractGillesScheen1.pdf
Open Access - Adobe PDF
- 78.07 KB
Details
- Authors
- Affiliations
Citations
Scheen, G., Rasson, J., Belaroussi, Y., Poncelet, O., Majoul, N., Raskin, J.-P., & Francis, L. (2016). Porous Silicon: when void enables new Si application fields. Third Winfab Scientific Day, UCL, Louvain-la-Neuve (Belgium). https://hdl.handle.net/2078.5/228486