Comparative study of effect of parasitic elements on RF FoM in 28 nm FD SOI and Bulk technologies

Kazemi Esfeh, B.;Kilchytska, Valeriya;Barral, V.;Planes, N.;Raskin, Jean-Pierre;et.al.
(2015) IEEE International SOI-3D-Subthreshold Microelectronics Technology Unified Conference – S3S’15 — Location: Rohnert Park, CA (USA) (5.October.2015)

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Abstract
This work presents a comparison of parasitic elements (capacitances and resistances) in a view of their effect on RF Figures of Merit (FoM) in 28 nm fully-depleted silicon-oninsulator (FD SOI) ultra-thin body and buried oxide (UTBB) MOSFETs and their Bulk counterparts. Complete set of smallsignal equivalent circuit elements (both ‘intrinsic”, i.e. device related and “extrinsic”, i.e. parasitic) are extracted from Sparameters measurements in a frequency range up to 40 GHz. It is shown that detrimental/harmful effect of parasitics, particularly capacitances, is stronger in 28 nm bulk technology compared to 28 FD SOI.
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Kazemi Esfeh, B., Kilchytska, V., Barral, V., Planes, N., Haond, M., Flandre, D., & Raskin, J.-P. (2015). Comparative study of effect of parasitic elements on RF FoM in 28 nm FD SOI and Bulk technologies. IEEE International SOI-3D-Subthreshold Microelectronics Technology Unified Conference – S3S’15, paper 7.a.3. https://doi.org/10.1109/S3S.2015.7333532