Neutron and gamma radiation effects on MEMS structures
(2011) International conference EuroSensors XXV — Location: Athens (Greece) (4.September.2011)
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- Abstract
- This work reports on the effects of neutron and gamma photons radiation on the electromechanical properties of different materials that are typically used in microelectromechanical systems (MEMS) fabrication. So far the effects of displacement damage due to a total neutron dose of 15.9 kGy on the elastic properties of single crystal Si and Si3N4 thin films have been investigated. In parallel radiation induced charging of dielectrics was studied using metal insulator semiconductor (MIS) structures fabricated from 500 nm thick thermal SiO2 and 20 nm thick Al2O3 obtained by atomic layer deposition (ALD). The MIS capacitors have been exposed to neutron doses ranging between 0.1 kGy and 5 kGy and the radiation induced damage was investigated.
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Citations
Gkotsis, P., Kilchytska, V., Militaru, O., Tang, X., Raskin, J.-P., Flandre, D., & Francis, L. (2011). Neutron and gamma radiation effects on MEMS structures. International conference EuroSensors XXV, paper #1345. https://hdl.handle.net/2078.5/227950