28 FDSOI Analog and RF Figures of merit at Cryogenic Temperatures
(2018) 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS 2018 — Location: Granada (Spain) (19.March.2018)
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- Abstract
- This work presents a detailed characterization of 28 nm FDSOI CMOS process at cryogenic temperatures. Electrostatic, Analog and RF Figures of Merit (FoM) are studied for the first time to our best knowledge. At cryogenic temperatures, 30-50% enhancement of Id and gm_max values as well as up to 100 GHz fT increase is demonstrated. Temperature behavior of analog and RF FoMs is discussed in terms of mobility and series resistance effect. This first study suggests 28FDSOI as a good contender for future read-out electronics around qubits.
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Kazemi Esfeh, B., Masselus, M., Planes, N., Haond, M., Raskin, J.-P., Flandre, D., & Kilchytska, V. (2018). 28 FDSOI Analog and RF Figures of merit at Cryogenic Temperatures. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS 2018, Granada (Spain). https://hdl.handle.net/2078.5/226730