Improving Noise and Linearity of CMOS Wideband Inductorless Balun LNAs for 10-GHz Software-Defined Radios in 28nm FDSOI
(2017) 2017 IEEE S3S Conference — Location: San Francisco (USA) (16.October.2017)
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ImprovingNoiseandLinearityofCMOSWidebandInductorlessBalunLNAsfor10-GHzSoftware-DefinedRadiosin28nmFDSOI.pdf
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- Abstract
- This paper presents the analysis and optimization of inductorless balun low-noise amplifiers (LNA) in a 28-nm fully-depleted SOI CMOS technology for wideband universal software-defined radio transceivers by means of an algorithm that optimizes the main figures of merit. An optimum combination of two techniques is provided leading to a new topology that overcomes the main tradeoffs of the previous circuits improving both linearity and noise with competitive bandwidth (BW), gain and power. Post-layout simulations show a BW of 10 GHz, a gain of 17 dB, an IIP3 of 7.4 dBm, and a NF of 3.4 dB with only 2.5 mW power consumption from a 1-V supply.
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Citations
Gimeno Gasca, C., Stas, F., de Streel, G., Bol, D., & Flandre, D. (2017). Improving Noise and Linearity of CMOS Wideband Inductorless Balun LNAs for 10-GHz Software-Defined Radios in 28nm FDSOI. Proceedings of the 2017 IEEE S3S Conference, p. 2. https://hdl.handle.net/2078.5/226676