Comparative study of non-linearities in 28 nm node FDSOI and Bulk MOSFETs
(2017) 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon – ULIS — Location: Athens, Greece (3.April.2017)
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- This work investigates, for the first time to our best knowledge, non-linearities in Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs and compares them with bulk counterparts. 1st, 2nd and 3rd order derivatives of current-voltage I-V characteristics, followed by Harmonic Distortions of 2nd and 3rd order (HD2 and HD3) were extracted based on DC measurements and simulations. Design window (i.e. bias and current conditions) with strongly reduced non-linearity in FDSOI device with respect to the bulk counterpart was identified and reasons of this reduction are discussed. Application of the back-gate bias in FDSOI MOSFET was shown to allow for further improvement of non-linearity.
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Kilchytska, V., Kazemi Esfeh, B., Gimeno Gasca, C., Parvais, B., Planes, N., Hahond, M., Raskin, J.-P., & Flandre, D. (2017). Comparative study of non-linearities in 28 nm node FDSOI and Bulk MOSFETs. Proceedings of 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon – ULIS, p. session 10, paper # 1. https://doi.org/10.1109/ULIS.2017.7962581