Challenges of monolithic integration for SiGe MEMS technology

Ray Chaudhuri, Ashesh;Severi, S.;Helin, P.;Francis, Laurent;Tilmans, H.A.C.
(2017) 15th IEEE Sensors Conference, SENSORS 2016 — Location: Orlando (United States) (30.October.2016)

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  • Ray Chaudhuri, AsheshIMEC, Leuven/Belgium
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  • Severi, S.IMEC, Leuven/Belgium
    Author
  • Helin, P.IMEC, Leuven/Belgium
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  • Francis, Laurentorcid-logoUCLouvain
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  • Tilmans, H.A.C.IMEC, Leuven/Belgium
    Author
Abstract
The paper describes the key challenges of CMOS integrated monolithic MEMS Accelerometer with SiGe MEMS technology combined with TSMC 0.18 μm CMOS technology. The developed SiGe MEMS technology shows ability to integrate above any standard foundry process. This allows us to build the smallest form-factor surface micromachined accelerometer for the consumer application in the range of ±2G. The total area of the Accelerometer including the MEMS structure and CMOS is 1.35 mm × 1.35 mm.
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Ray Chaudhuri, A., Severi, S., Helin, P., Francis, L., & Tilmans, H. A. C. (2017). Challenges of monolithic integration for SiGe MEMS technology. 15th IEEE Sensors Conference, SENSORS 2016, Orlando (United States). https://hdl.handle.net/2078.5/226498