Robust Methodology for Low-Frequency Noise Power Analyses in Advanced MOS Transistors
(2019) 5th joint EUROSOI – ULIS 2019 Conference — Location: Grenoble (France) (1.April.2019)
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RobustMethodologyforLow-FrequencyNoisePowerAnalysisinAdvancedMOSTransistor.pdf
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- Abstract
- We present a new methodology to discriminate random telegraph noise (RTN) and flicker (1/f) noise components from set-up noise. We illustrate it for a strong RTN case (∆ID/ID ≈ 30 %) measured on a 26 nm gate length nMOS transistor. The approach is based on high-accuracy time-domain measurements. An iterative Schmitt trigger-like algorithm was developed to properly identify and model the RTN and 1/f noise. Statistical analysis allows to assess the accuracy of the extraction. The power spectral densities (PSD) of the different noise models accurately match the frequency measurements.
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Citations
Van Brandt, L., Kazemi Esfeh, B., Kilchytska, V., & Flandre, D. (2019). Robust Methodology for Low-Frequency Noise Power Analyses in Advanced MOS Transistors. 5th joint EUROSOI – ULIS 2019 Conference, Grenoble (France). https://hdl.handle.net/2078.5/226435