High-temperature SOI MOS device processingFlandre, Denis(1996) HITEN TIG Meeting 1996 — Location: Paris (France) (24.October.1996)
FilesNo attached file found for this publication.DetailsAuthorsFlandre, DenisUCLouvainAuthorAffiliationsUCLouvainFSA/ELEC - Département d'électricitéShow moreCitations APA Chicago FWB Flandre, D. (1996). High-temperature SOI MOS device processing. Proceedings of the HITEN TIG Meeting 1996. HITEN TIG Meeting 1996, Paris (France). https://hdl.handle.net/2078.5/225757