High-temperature SOI MOS device processing

(1996) HITEN TIG Meeting 1996 — Location: Paris (France) (24.October.1996)

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Flandre, D. (1996). High-temperature SOI MOS device processing. Proceedings of the HITEN TIG Meeting 1996. HITEN TIG Meeting 1996, Paris (France). https://hdl.handle.net/2078.5/225757