A comparative study of non-linearities in bulk and SOI linear resistors based on 2- and 4-transistor structures
(1995) IEEE International SOI Conference, 1995 — Location: Tucson (USA) (3.October.1995)
Files
No attached file found for this publication.
Details
- Authors
- Abstract
- Both measurements and simulations based on accurate current models prove that the use of a SOI 4-transistor balanced structure as a passive triode resistor for continuous time MOSFET-C filters or integrators can give a linearity improvement of up to 20 dB over bulk counterparts
- Affiliations
Citations
Gentinne, B., Dessard, V., Louveaux, S., Flandre, D., & Colinge, J.-P. (1995). A comparative study of non-linearities in bulk and SOI linear resistors based on 2- and 4-transistor structures. Proceedings of the IEEE International SOI Conference, 1995, 64-65. https://doi.org/10.1109/SOI.1995.526462