A SOI-CMOS micro-power first-order Sigma-Delta modulator
(1996) IEEE International SOI Conference 1996 — Location: Fort Myers (USA) (30.September.1996)
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- Abstract
- The low-power and high-temperature potentials of SOI have been used to design a ΣΔ modulator that achieves performances hard to obtain in bulk technology. From this first study, we estimate that further improvements based on the use of a technology with lower transistor size and lower threshold voltage, together with higher-order loop filters and higher OSR could boost the precision and further reduce the power dissipation, for the same signal bandwidth. The potential of FD SOI in high-temperature data conversion has also been demonstrated
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Viviani, A., Flandre, D., & Jespers, P. (1996). A SOI-CMOS micro-power first-order Sigma-Delta modulator. Proceedings of the IEEE International SOI Conference, 1996, 110-111. https://doi.org/10.1109/SOI.1996.552518