Introduction of the SOI MOSFET dimensions in the high-temperature leakage drain current model
(1996) XI Congress of the Brazilian Microelectronics Society — Location: Aguas de Sindoia (Brazil) (August.1996)
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Universidade de Sao Paulo Laboratorio de Sistemas integraveis da Escola politecnica Centro Universitário da FEI Departamento de Engenharia Eletrica
Citations
Bellodi, M., Martino, J. A., & Flandre, D. (1996). Introduction of the SOI MOSFET dimensions in the high-temperature leakage drain current model. Proceedings of the XI Congress of the Brazilian Microelectronics Society. Published. XI Congress of the Brazilian Microelectronics Society, Aguas de Sindoia (Brazil). https://hdl.handle.net/2078.5/225467