Potential and design of MOSFET-C continuous-time filters in SOI technology

Dessard, Vincent;Gentinne, Bernard;Flandre, Denis
(1996) ESSCIRC′96 — Location: Neuchatel (Suisse) (17.September.1996)

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  • Dessard, VincentUCLouvain
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  • Gentinne, BernardUCLouvain
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  • Flandre, DenisUCLouvain
    Author
Abstract
A study of the implementation of integrated MOSFET-C continuous-time filters in SOI technology is presented. A detailed comparison of both the bulk and SOI linearity performances of two- or four-transistor balanced structures is given and provides the experimental demonstration of the superiority of the four-MOSFET over two-MOSFET structures as well as of SOI over bulk. Furthermore, to keep a good filter linearity, the use of a simple OTA-like amplifier is also discussed. Design and measurement of a complete MOSFET-C SOI CMOS audio-equalizer is finally reported.
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Dessard, V., Gentinne, B., & Flandre, D. (1996). Potential and design of MOSFET-C continuous-time filters in SOI technology. Proceedings of ESSCIRC′96, 416-419. https://hdl.handle.net/2078.5/225343