Intrinsic gate capacitances and large-signal transient modeling of thin-film accumulation-mode p-channel SOI MOSFETs
(1992) IEEE International SOI Conference, 1992 — Location: Ponte Vedra (Floride) (6.October.1992)
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Gentinne, B., Flandre, D., Terao, A., & Colinge, J.-P. (1992). Intrinsic gate capacitances and large-signal transient modeling of thin-film accumulation-mode p-channel SOI MOSFETs. Proceedings of the IEEE International SOI Conference, 1992, 52-53. https://doi.org/10.1109/SOI.1992.664790