High temperature characteristics of GAA/SOI transistors and circuits
(1992) IEEE International SOI Conference, 1992 — Location: Ponte Vedra (Floride) (6.October.1992)
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- Abstract
- The GAA (Gate-All-Around) transistor is one of the latest devices of the SOI family. It presents electrical advantages as in increased transconductance and a high output impedance. It is also expected to perform very well in harsh environments like high temperatures and radiations. The motivation of this work is to verify wheter the electrical advantages still remain at temperature up to 300°C, on separate devices as well as some digital circuit components. Classical SOI and GAA structues were compared with the same starting film thickness, gate oxide, treshold voltage and design.
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Citations
Francis, P., Terao, A., & Flandre, D. (1992). High temperature characteristics of GAA/SOI transistors and circuits. Proceedings of the IEEE International SOI Conference, 1992, 54-55. https://doi.org/10.1109/SOI.1992.664791