SOI technology for high-temperature applications
(1992) International Electron Devices Meeting, 1992 (IEDM ’92) — Location: San Francisco (USA) (13.December.1992)
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- Abstract
- This work investigates and demonstrates the potential of Silicon-On-Insulator (SOI) MOSFETs for high-temperature analog and digital applications. The small area of junctions in SOI/MOS devices reduces the high-temperature leakage currents by as much as 3 to 4 orders of magnitude over regular (bulk) MOS devices. The threshold voltage variation with temperature is 2 to 3 times smaller than in bulk devices, and the output conductance of SOI MOSFETs actually improves as temperature is increased. These properties enable the fabrication of digital and analog SOI/CMOS circuits operating up to over 300°C with little performance degradation. This paper describes the high-temperature performances of small SOI/CMOS circuit blocks such as static and dynamic logic gates, frequency dividers, and operational amplifiers
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Francis, P., Terao, A., Gentinne, B., Flandre, D., & Colinge, J.-P. (1992). SOI technology for high-temperature applications. Proceedings of the International Electron Devices Meeting, 1992 (IEDM ’92), 353-356. https://doi.org/10.1109/IEDM.1992.307590