Schottky-Barrier FET Ultra-Low-Power Diode

Schwarz, Mike;Koes, Alexander;Flandre, Denis
(2020) 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) — Location: Virtual conference (1.September.2020)

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Abstract
In this paper, for the first time, we apply the ultra-low-power (ULP) diode concept with Schottky Barrier (SB) transistors and analyze the performance in comparison to standard CMOS, using calibrated TCAD mixed-mode simulations. The negative impedance characteristics obtained in reverse mode with SB devices are shown to offer superior current performance compared to CMOS, especially as a function of temperature.
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Schwarz, M., Koes, A., & Flandre, D. (2020). Schottky-Barrier FET Ultra-Low-Power Diode. Proceedings, p. 1-4. https://doi.org/10.1109/EUROSOI-ULIS49407.2020.9365540