Oliveira, KevinInternational Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
Author
Chen, Wei-ChaoÅngström Laboratory, Department of Engineering Sciences, Uppsala University, 751 21 Uppsala, Sweden
Author
Lontchi Jioleo, JacksonUCLouvain
Author
Oliveira, António J. N.International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal; Departemento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal
Salomé, Pedro M. P.International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal; Departemento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal
Interface recombination in sub-μm optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2 %, a 1.3 % absolute improvement over the conventional substrate (without SiOx).
Oliveira, K., Chen, W.-C., Lontchi Jioleo, J., Oliveira, A. J. N., Teixeira, J. P., Flandre, D., Edoff, M., Fernandes, P. A., & Salomé, P. M. P. (2021). SiOx patterned based substrates implemented in Cu(In,Ga)Se2 ultrathin solar cells: optimum thickness. 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC 2021), virtual conference. https://hdl.handle.net/2078.5/224304