Comparison of hot-carrier effects in thin-film accumulation-mode SOI and GAA p-MOSFETs

Flandre, Denis;Francis, P.;Colinge, Jean-Pierre;Cristoloveanu, Sorin
(1993) IEEE International SOI Conference, 1993 — Location: Palm Springs (USA) (5.October.1993)

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Authors
  • Flandre, DenisUCLouvain
    Author
  • Francis, P.UCLouvain
    Author
  • Colinge, Jean-PierreUCLouvain
    Author
  • Cristoloveanu, SorinIMEP, Grenoble
    Author
Abstract
The advantage of symmetrical gate (GAA) SOI structures over regular SOI in the case of AM p-MOSFETs was demonstrated in several respects: suppression of a latch phenomenon, suppression of excessively high hot-electron gate currents which have been experimentally and theoretically correlated with the latch, and better resistance to hot-electron degradation due to the absence of the latch and of the vulnerable buried oxide
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Flandre, D., Francis, P., Colinge, J.-P., & Cristoloveanu, S. (1993). Comparison of hot-carrier effects in thin-film accumulation-mode SOI and GAA p-MOSFETs. Proceedings of the IEEE International SOI Conference, 1993, 160-161. https://hdl.handle.net/2078.5/223512