Unusual gate current transient behavior in SOI MOSFETs
(2005) 2005 IEEE International SOI Conference — Location: Honolulu, HI, USA (3.October.2005)
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- Abstract
- We report unusual gate current variations with gate bias and time in accumulation regime. Measurements and simulations show the importance of the time-dependent floating body potential in both partially and fully depleted SOI MOSFETs. These variations during front-gate voltage scan and the resulting transient gate current are discussed as a combination of several mechanisms such as capacitive coupling, SRH generation, band-to-band tunneling and impact ionization. The gate current behavior is important for EEPROMs and depends on the device geometry and operating conditions.
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Bawedin, M., Cristoloveanu, S., & Flandre, D. (2005). Unusual gate current transient behavior in SOI MOSFETs. Proceedings of the 2005 IEEE International SOI Conference (QSIC 2005) (IEEE Cat. No.05CH37694), 67-69. https://hdl.handle.net/2078.5/223007