Subthreshold slope of accumulation-mode p-channel SOI MOSFETs
(1993) IEEE International SOI Conference, 1993 — Location: Palm Springs (USA) (5.October.1993)
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- Abstract
- There exists a well established model for the subthreshold slope of enhancement-mode MOSFETs. Indeed, the subthreshold slope is given by: S=kT/q ln10 (1+α) where α is equal to the ratio Cbb /Cox1. In other words, α is the ratio between the capacitance of the structure below the channel and that of the structure above it. Cbb is equal to Cdepl, Csi and (Csi in series with Cox2) in bulk, fully depleted (FD) SOI with back accumulation and fully depleted SOI devices, respectively. As the potential distribution in an accumulation-mode (AM) p-channel SOI MOSFET in the subthreshold regime is similar to that of an n-channel FD enhancement-mode (FDEM) device, the same analytical model can be used to determine S
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Colinge, J.-P., Flandre, D., & Van de Wiele, F. (1993). Subthreshold slope of accumulation-mode p-channel SOI MOSFETs. Proceedings of the IEEE International SOI Conference, 1993, 146-147. https://doi.org/10.1109/SOI.1993.344558