A 1-GHz operational transconductance amplifier in SOI technology
(1995) IEEE International SOI Conference, 1995 — Location: Tucson (USA) (3.October.1995)
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- Abstract
- This work investigates the feasibility of realisation of SOI CMOS Operational Transconductance Amplifiers (OTA) operating up to 1 GHz. In contrast to a previously published microwave wideband amplifier driving low ohmic resistive line termination, OTAs for Switched-Capacitor (SC) applications need a high impedance and capacitive output node. In addition applications such as sigma-delta converters require fast OTAs. In order to reduce the settling time, the transfer function should also include a minimal amount of poles and zeros. Consequently in spite of its low voltage gain, this single-stage OTA could be of interest for high-frequency applications
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Citations
Eggermont, J.-P., Flandre, D., Gillon, R., & Colinge, J.-P. (1995). A 1-GHz operational transconductance amplifier in SOI technology. Proceedings of the IEEE International SOI Conference, 1995, 127-128. https://doi.org/10.1109/SOI.1995.526493