Potential of surface accumulation mode for deep-submicron fully-depleted SOI CMOS technologies
(2001) Silicon-On-Insulator Technology and Devices X. Proceedings of the Tenth International Symposium — Location: Washington, DC (USA)
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- Abstract
- We investigate the performance of thin-film accumulation mode (AM) SOI MOSFETs for ultrashort channel technologies. Our experimental results show that fully-depleted SOI MOSFETs working in front surface accumulation mode present smaller short-channel effects and better analog performance than AM devices working with body conduction. We therefore demonstrate the potential of surface AM SOI MOS transistors with full film depletion and we present some possible device designs, validated by numerical simulations, in order to work in this new operation mode with low power deep submicron technologies.
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Iniguez, B., Rauly, E., & Flandre, D. (2001). Potential of surface accumulation mode for deep-submicron fully-depleted SOI CMOS technologies. In Cristoloveanu, S.; Hemment, P.L.F.; Izumi, K.T.; Celler, G.K.; Assaderaghi, F.; Kim, Y-W; (ed.), Silicon-on-Insulator Technology and Devices X. Proceedings of the TenthInternational Symposium (Electrochemical Society Proceedings Vol.2001-3) (pp. 251-258). Electrochem. soc. https://hdl.handle.net/2078.5/222270