Very high efficiency 13.56 MHz RFID input stage voltage multipliers based on ultra low power MOS diodes

Gosset, Geoffroy;Rue, Bertrand;Flandre, Denis
(2008) 2008 IEEE International Conference on RFID — Location: Las Vegas, NV, USA (16.April.2008)

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  • Gosset, GeoffroyUCLouvain
    Author
  • Rue, BertrandUCLouvain
    Author
  • Author
Abstract
This paper presents an ULP (ultra-low-power) diode based voltage multiplier which is used to convert RF input signal to DC supply voltage. This uses an input signal of 1 V peak to peak and 13.56 MHz frequency and reaches 2 to 3 V at its output with 10 diodes. The IC is implemented in a 2 mu m multiple- threshold voltage SOI CMOS technology. The IC outperforms, by a factor larger than 2, classical MOS diodes based voltage multiplier, implemented on the same technology, from the point of view of efficiency (minimum RF input power for given output specifications) and impedance.
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Gosset, G., Rue, B., & Flandre, D. (2008). Very high efficiency 13.56 MHz RFID input stage voltage multipliers based on ultra low power MOS diodes. Proceedings of the 2008 IEEE International Conference on RFID, 134-140. https://hdl.handle.net/2078.5/221173