Experiments and modeling of dynamic floating body effects in 1T-DRAM fully depleted SOI devices
(2007) Mixed Design of Integrated Circuits and Systems. MIXDES 2007 — Location: Ciechocinek, Poland (21.June.2007)
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- Abstract
- We describe the transient floating-body mechanism which occurs in fully depleted SOI transistors and leads to a memory effect. A physics-based model for the potential variation with time is proposed and validated by numerical simulations. This model reproduces and clarifies the operation of the novel capacitor-less MSDRAM, the properties of which are discussed.
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Bawedin, M., Cristoloveanu, S., Dessard, V., & Flandre, D. (2007). Experiments and modeling of dynamic floating body effects in 1T-DRAM fully depleted SOI devices. In Napieralski, A. (ed.), Proceedings of the 14th International Conference Mixed Design of Integrated Circuits andSystems (pp. 84-88). IEEE. https://hdl.handle.net/2078.5/221164