Transition from ballistic to ohmic transport in Tbranch Junctions at room temperature in GaInAs/AlInAs heterostructures

Galloo, J.;Pichonat, E.;Roelens, Y.;Bollaert, S.;Huynen, Isabelle;et.al.
(2004) IPRM 2004 Conference (16th International Conference on Indium Phosphide and Related Materials) — Location: Kagoshima, Japan (31.May.2004)

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Authors
  • Galloo, J.IEMN, France
    Author
  • Pichonat, E.IEMN, France
    Author
  • Roelens, Y.Autre
    Author
  • Bollaert, S.Autre
    Author
  • Mateos, JoséUCLouvain
    Author
  • Gonzales, G.UCLouvain
    Author
  • Hackens, BenoîtUCLouvain
    Author
  • Bednarz, LukaszUCLouvain
    Author
  • Huynen, IsabelleUCLouvain
    Author
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Abstract
We have developed technology based on GalnAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-branch junctions (TBJs), Y-branch junctions (YBJs)). Then we present DC characterization of TBJs to show the transition from ballistic to ohmic transport at room temperature and also experimental results for Y-branch junctions (YBJs).
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Galloo, J., Pichonat, E., Roelens, Y., Bollaert, S., Wallart, X., Mateos, J., Gonzales, G., Boutry, H., Hackens, B., Bednarz, L., & Huynen, I. (2004). Transition from ballistic to ohmic transport in Tbranch Junctions at room temperature in GaInAs/AlInAs heterostructures. Proceedings of the IPRM 2004 Conference (16th International Conference on Indium Phosphide and Related Materials), pp. 378-381. https://hdl.handle.net/2078.5/220866