Intrinsic gate capacitances of SOI MOSFETs: measurement, modelling, floating substrate effects
(1990) 20th European Solid State Device Research Conference (ESSDERC 1990) — Location: Nottingham (UK) (10.September.1990)
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- Abstract
- Measurements of intrinsic gate capacitances of SOI MOSFETs are described and shown to provide valuable information for characterization purposes as well as to cast some light on dynamic floating substrate effects. An accurate charge-based analytical model valid in linear operation is also presented.
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Citations
Flandre, D., Van de Wiele, F., Jespers, P. G. A., & Haond, M. (1990). Intrinsic gate capacitances of SOI MOSFETs: measurement, modelling, floating substrate effects. In Eccleston, W.; Rosser, P.J.; (ed.), ESSDERC 90. 20th European Solid State Device Research Conference (pp. 437-440). Adam hilger. https://hdl.handle.net/2078.5/219245