New leakage drain current model for high-temperature SOI MOSFET
(1995) X Congress of Brazilian Microelectronics Society — Location: Canella (Brazil) (August.1995)
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Laboratório de Sistemas Integráveis da Escola Politécnica da Universidade de São Paulo
Citations
Bellodi, M., Martino, J. A., & Flandre, D. (1995). New leakage drain current model for high-temperature SOI MOSFET. Proceedings of the X Congress of Brazilian Microelectronics Society, 557-563. https://hdl.handle.net/2078.5/219225