Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications
(2017) 11th European Space Power Conference — Location: Thessaloniki (Greece) (3.October.2016)
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- A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to silicon carbide (SiC). This novel silicon-on-silicon-carbide (Si/SiC) substrate solution promises to combine the benefits of silicon-on-insulator (SOI) technology (i.e device confinement, radiation tolerance, high and low temperature performance) with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance). Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.
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Citations
Gammon, P. M., Chan, C. W., Gity, F., Trajkovic, T., Kilchytska, V., Fan, L., Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A., & Gardner, J. W. (2017). Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications. Proceedings of the 11th European Space Power Conference. Published. 11th European Space Power Conference, Thessaloniki (Greece). https://doi.org/10.1051/e3sconf/20171612003