Comparison of self-heating in effects in GAA and SOI devices
(1995) 25th Solid State Device Research Conference (ESSDERC 1995) — Location: The Hague (the Netherlands) (25.September.1995)
Files
No attached file found for this publication.
Details
- Authors
- Abstract
- Experimental evidence of lesser current reduction caused by self-heating in double-gate GAA transistors, compared to regular SOI MOSFETs, is provided and confirmed by a simple analytical model. The scaling of the buried oxide thickness is discussed in general.
- Affiliations
Citations
Francis, P., Flandre, D., Colinge, J.-P., & Van de Wiele, F. (1995). Comparison of self-heating in effects in GAA and SOI devices. Proceedings of the 25th ESSDERC Conference, 225-228. https://hdl.handle.net/2078.5/218787