A physical model for the characterization of SOI MOSFET's in linear operation

Flandre, Denis;Van de Wiele, Fernand
(1989) 19th European Solid State Device Research Conference 1989 (ESSDERC ’89) — Location: Berlin (Germany) (11.September.1989)

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The present paper deals with the electrical characterization of long-channel SOI MOSFET's in linear operation. Limitations of previous analytical analyses are enphasized and a new physical model with a larger scope of application is presented. The model is shown to be in good agreement with I-V measurements performed on SOI MOSEET's of various thicknesses, in strong inversion as well as in subthreshold operation.
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Flandre, D., & Van de Wiele, F. (1989). A physical model for the characterization of SOI MOSFET’s in linear operation. Proceedings of the 19th European Solid State Device Research Conference 1989 (ESSDERC ’89), 755-758. https://hdl.handle.net/2078.5/218728