Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
(2009) Applied Physics Letters — Vol. 94, n° 19 (2009)
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- Abstract
- The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 degrees C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.
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Reckinger, N., Tang, X., Bayot, V., Yarekha, D. A., Dubois, E., Godey, S., Wallart, X., Larrieu, G., Laszcz, A., Ratajczak, J., Jacques, P., & Raskin, J.-P. (2009). Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing. Applied Physics Letters, 94(19). https://doi.org/10.1063/1.3136849 (Original work published 2009)