On the origin of the excess low-frequency noise in graded-channel silicon-on-insulator nMOSFETs
(2007) IEEE Electron Device Letters — Vol. 28, n° 10, p. 919-921 (2007)
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- Abstract
- The origin of the low-frequency noise in graded-channel silicon-on-insulator nMOSFET is studied as a function of the back-gate bias at a low drain-to-source bias. It is shown that an excess noise peak that is correlated with the peak in the transconductance can be observed. This excess noise is due to a generation-recombination component in the low-frequency range, which is suppressed when the back gate is in accumulation mode.
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Citations
Simoen, E., Flandre, D., Claeys, C., Chung, T. M., & Raskin, J.-P. (2007). On the origin of the excess low-frequency noise in graded-channel silicon-on-insulator nMOSFETs. IEEE Electron Device Letters, 28(10), 919-921. https://doi.org/10.1109/LED.2007.905958 (Original work published 2007)