Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications
(2007) Solid-State Electronics — Vol. 51, n° 5, p. 655-661 (2007)
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- Abstract
- An analytical and continuous model for a highly-doped double-gate Sol MOSFET, in which the channel current is expressed as an explicit function of the applied voltages, is presented targeting the electrical simulation of baseband analog circuits. A unified charge control model is for the first time derived for doped double-gate transistors. It is valid from below to well above threshold, showing a smooth transition between the regimes. Small-signal parameters can be obtained from the model. The calculated current and capacitance characteristics show a good agreement with 2D numerical device simulations, in all regimes, and also a very good match to FinFET experimental data, in the case of the drain current. (c) 2007 Elsevier Ltd. All rights reserved.
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Moldovan, O., Cerdeira, A., Jimenez, D., Raskin, J.-P., Kilchytska, V., Flandre, D., Collaert, N., & Iniguez, B. (2007). Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications. Solid-State Electronics, 51(5), 655-661. https://doi.org/10.1016/j.sse.2007.02.039 (Original work published 2007)