Frequency variation of the small-signal output conductance of decananometer MOSFETs due to substrate crosstalk

Kilchytska, Valeria;Pailloncy, Guillaume;Lederer, Dimitri;Raskin, Jean-Pierre;Flandre, Denis;et.al.
(2007) IEEE Electron Device Letters — Vol. 28, n° 5, p. 419-421 (2007)

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Abstract
Frequency variation of the output conductance in advanced fully depleted SOI and multiple-gate MOSFETs related to the electrical coupling between drain and Si substrate underneath the buried oxide (BOX) is analyzed through measurements and 2-D simulations. A low-frequency (LF) conductance variation in these devices, which could be erroneously attributed to the self-heating effect, is proved to be related to the presence of the Si substrate underneath the BOX. Suppression of this substrate-related LF transition in narrow-fin FinFET's output conductance is experimentally demonstrated. Furthermore, the substrate-related transitions are shown to be increasing with device down-scaling, as well as BOX thinning, suggesting that this effect becomes more important for the future device generations.
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