Frequency variation of the small-signal output conductance of decananometer MOSFETs due to substrate crosstalk
(2007) IEEE Electron Device Letters — Vol. 28, n° 5, p. 419-421 (2007)
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- Abstract
- Frequency variation of the output conductance in advanced fully depleted SOI and multiple-gate MOSFETs related to the electrical coupling between drain and Si substrate underneath the buried oxide (BOX) is analyzed through measurements and 2-D simulations. A low-frequency (LF) conductance variation in these devices, which could be erroneously attributed to the self-heating effect, is proved to be related to the presence of the Si substrate underneath the BOX. Suppression of this substrate-related LF transition in narrow-fin FinFET's output conductance is experimentally demonstrated. Furthermore, the substrate-related transitions are shown to be increasing with device down-scaling, as well as BOX thinning, suggesting that this effect becomes more important for the future device generations.
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Kilchytska, V., Pailloncy, G., Lederer, D., Raskin, J.-P., Collaert, N., Jurczak, M., & Flandre, D. (2007). Frequency variation of the small-signal output conductance of decananometer MOSFETs due to substrate crosstalk. IEEE Electron Device Letters, 28(5), 419-421. https://doi.org/10.1109/LED.2007.895374 (Original work published 2007)