High frequency degradation of body-contacted PD SOI MOSFET output conductance
(2005) Semiconductor Science and Technology — Vol. 20, n° 5, p. 469-472 (2005)
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- Abstract
- This paper analyses the frequency dependence of the output conductance (G(d)) of several partially depleted (PD) SOI MOSFETs from the 0.18 mu m technology node. Our experimental data indicate that body-tied and dynamic-threshold MOS devices suffer from a strong Gd degradation around I GHz. We propose a small signal interpretation and an equivalent circuit of the devices seen from the drain terminal to explain the observed phenomena. The model clearly identifies the non-zero value of the body resistance as the source of the Gd degradation.
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Lederer, D., Flandre, D., & Raskin, J.-P. (2005). High frequency degradation of body-contacted PD SOI MOSFET output conductance. Semiconductor Science and Technology, 20(5), 469-472. https://doi.org/10.1088/0268-1242/20/5/025 (Original work published 2005)