AC behavior of gate-induced floating body effects in ultrathin oxide PD SOI MOSFETs
(2004) IEEE Electron Device Letters — Vol. 25, n° 2, p. 104-106 (2004)
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- Abstract
- In this letter we present for the first time an ac analysis of the gate-induced floating body effects (GIFBE) occurring in ultrathin gate oxide partially depleted (PD) silicon-on-insulator (SOI) MOSFETs due to tunneling gate current. A simple equivalent circuit is proposed, which indicates that the ac behavior of GIFBE is related to the small-signal voltage variations of the floating body region. It also shows that due to the high impedance seen by the body region toward the external nodes, the GIFBE frequency dependence is characterized by a very low cut off frequency (< a few kilohertz), which is consistent with experimental data and circuit simulations performed with BSIMSOI.
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Lederer, D., Flandre, D., & Raskin, J.-P. (2004). AC behavior of gate-induced floating body effects in ultrathin oxide PD SOI MOSFETs. IEEE Electron Device Letters, 25(2), 104-106. https://doi.org/10.1109/LED.2003.822658 (Original work published 2004)