Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs
(2003) IEEE Electron Device Letters — Vol. 24, n° 6, p. 414-416 (2003)
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- Abstract
- This paper investigates the influence of the silicon substrate. on the ac characteristics of silicon-on-insulator (SOI) MOSFETs. It is shown for the first time that the presence of the substrate, underneath the buried oxide results in two transitions (i.e., zero-pole doublets) in the frequency response of the output conductance. It is demonstrated that the appearance of these transitions, the position and-amplitude of which strongly depend on the substrate doping, is caused by the variation of the potential at substrate-buried oxide interface, which we call the Floating Effective Back-Gate (FEBG) effect. A first-order small-signal equivalent circuit is proposed to. support our observations.
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Kilchytska, V., Flandre, D., Levacq, D., Lederer, D., & Raskin, J.-P. (2003). Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs. IEEE Electron Device Letters, 24(6), 414-416. https://doi.org/10.1109/LED.2003.813373 (Original work published 2003)