Deep-submicrometer DC-to-RF SOI MOSFET macro-model
(2001) IEEE Transactions on Electron Devices — Vol. 48, n° 9, p. 1981-1988 (2001)
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- Abstract
- We present a submicrometer RF fully depleted SOI MOSFET macro-model based on a complete extrinsic small-signal equivalent circuit and an improved CAD model for the intrinsic device. The delay propagation effects in the channel are modeled by splitting the intrinsic transistor into a series of shorter transistors, for each of which a quasistatic device model can be used. Since the intrinsic device model is charge-based, our RF SOI MOSFET model can be used in both small and large-signal analyses. The model has been validated for frequencies up to 40 GHz and effective channel lengths down to 0.16 mum.
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Iniguez, B., Flandre, D., Raskin, J.-P., Demeus, L., Neve, A., Vanhoenacker-Janvier, D., Simon, P., & Goffioul, M. (2001). Deep-submicrometer DC-to-RF SOI MOSFET macro-model. IEEE Transactions on Electron Devices, 48(9), 1981-1988. https://doi.org/10.1109/16.944186 (Original work published 2001)